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    Which of the following statements in the case of IGBT is true?
    Question

    Which of the following statements in the case of IGBT is true?

    A.

    Its ON state voltage drop is very less

    B.

    It is a current controlled device

    C.

    It works on the principle of reproduction like a thyristor

    D.

    Its switching speed is higher than that MOSFET.

    Correct option is A


    The IGBT has a low ON-state voltage drop due to its bipolar conduction mechanism, making it efficient for high-power applications.

    Advantage of insulated gate bipolar transistor
    (i) High voltage capability
    (ii) Low - ON resistance
    (iii) Low switching loss

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