In a common emitter (CE) amplifier having a voltage gain G, the transistor used has transconductance 0.03 mho and current gain 25. If the above transistor is replaced with another one with transconductance 0.02 mho and current gain 20, the voltage gain will be:

Zener diode is a ___________ doped PN junction diode and connected in ___________ bias in the circuit.

pure Si crystal has $$6×10^{28}$$​ atoms $$\text{m}^3$$​. It is doped by 1 ppm concentration of pentavalent As. Then the number of electrons and holes are:

(Given that $$\text{n}_\text i=1.5×10^{16}\space\text{m} ^{-3}$$​)

When Ge is doped with ___________ a p-type semiconductor is formed.

Which of the following statements is/are correct about a p-n junction diode?

(a) The threshold voltage or cut-in voltage for germanium diode is about 0.7 V.

(b) The current under reverse bias is essentially voltage independent up to breakdown voltage.

When Si is doped with _____________ an n-type semiconductor is formed.

Which of the following statements is/are correct for a p-n junction diode?

(a) During forward bias, the width of depletion region decreases and the barrier height is reduced.

(b) During reverse bias, the width of depletion region increases and the barrier height increases.

Silicon (at 300 K) has hole concentration (and equal electron concentration) of 1.5 × $$10^{16}$$​ $$\text m^{-3}$$​. After indium is doped, the new hole concentration is 4.5 × $$10^{22}$$​ $$\text m^{-3}$$​. The value of electron concentration in the doped silicon is:

Electric conduction in a semiconductor takes place due to:

The charge carriers in a p-type semiconductor are:

An unbiased p-n junction has holes diffusing from p-region to the n-region because: