Consider the following statements A and B and identify the correct answer.
A. For a solar-cell the I-V characteristics lies in the IV quadrant of the given graph.
B. In a reverse biased pn junction diode, the current measured in (μA), is due to majority charge carries.

Silicon can be doped using one of the following elements as dopant :

Given below are V versus I graphs for different types of p-n junction diodes marked A, B, C and D.


The correct sequence of graphs corresponding to forward biased p-n junction; Zener diode; Photo diode
Solar cell in order is ___________.
Fill in the blank with the correct answer from the options given below.

For a full wave rectifier, if the input frequency is 50 Hz, the output frequency will be _____________.
Fill in the blank with the correct answer from the options given below.

A n-p-n transistor is connected in common emitter configuration (see figure) in which collector voltage drop across load resistance (800Ω) connected to the collector circuit is 0.8 V. The collector current is

The output (Y) of the given logic gate is similar to the output of an/a

Consider the following statements A and B and identify the correct answer.
A. For a solar-cell the I-V characteristics lies in the IV quadrant of the given graph.
B. In a reverse biased pn junction diode, the current measured in (μA), is due to majority charge carries.

Silicon can be doped using one of the following elements as dopant :